JPS5123432B2 - - Google Patents

Info

Publication number
JPS5123432B2
JPS5123432B2 JP46065271A JP6527171A JPS5123432B2 JP S5123432 B2 JPS5123432 B2 JP S5123432B2 JP 46065271 A JP46065271 A JP 46065271A JP 6527171 A JP6527171 A JP 6527171A JP S5123432 B2 JPS5123432 B2 JP S5123432B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP46065271A
Other languages
Japanese (ja)
Other versions
JPS4831061A (en]
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46065271A priority Critical patent/JPS5123432B2/ja
Priority to GB3931172A priority patent/GB1400574A/en
Priority to CA150,108A priority patent/CA965188A/en
Priority to NL7211602A priority patent/NL7211602A/xx
Priority to DE2242026A priority patent/DE2242026A1/de
Publication of JPS4831061A publication Critical patent/JPS4831061A/ja
Priority to US05/407,285 priority patent/US4007478A/en
Publication of JPS5123432B2 publication Critical patent/JPS5123432B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/918—Light emitting regenerative switching device, e.g. light emitting scr arrays, circuitry

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP46065271A 1971-08-26 1971-08-26 Expired JPS5123432B2 (en])

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP46065271A JPS5123432B2 (en]) 1971-08-26 1971-08-26
GB3931172A GB1400574A (en) 1971-08-26 1972-08-23 Field effect transistors
CA150,108A CA965188A (en) 1971-08-26 1972-08-24 Field effect transistor
NL7211602A NL7211602A (en]) 1971-08-26 1972-08-25
DE2242026A DE2242026A1 (de) 1971-08-26 1972-08-26 Mis-feldeffekttransistor
US05/407,285 US4007478A (en) 1971-08-26 1973-10-17 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46065271A JPS5123432B2 (en]) 1971-08-26 1971-08-26

Publications (2)

Publication Number Publication Date
JPS4831061A JPS4831061A (en]) 1973-04-24
JPS5123432B2 true JPS5123432B2 (en]) 1976-07-16

Family

ID=13282082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46065271A Expired JPS5123432B2 (en]) 1971-08-26 1971-08-26

Country Status (6)

Country Link
US (1) US4007478A (en])
JP (1) JPS5123432B2 (en])
CA (1) CA965188A (en])
DE (1) DE2242026A1 (en])
GB (1) GB1400574A (en])
NL (1) NL7211602A (en])

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144479A (ja) * 1983-01-28 1984-08-18 エスエスエムシー　インコーポレーテッド ミシンの押しボタン制御モジユ−ル

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5714064B2 (en]) * 1974-04-25 1982-03-20
JPS5718710B2 (en]) * 1974-05-10 1982-04-17
JPS5648983B2 (en]) * 1974-05-10 1981-11-19
JPS5543623B2 (en]) * 1975-01-29 1980-11-07
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
DE2611338C3 (de) * 1976-03-17 1979-03-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Feldeffekttransistor mit sehr kurzer Kanallange
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
US4132998A (en) * 1977-08-29 1979-01-02 Rca Corp. Insulated gate field effect transistor having a deep channel portion more highly doped than the substrate
GB2007430B (en) * 1977-11-03 1982-03-03 Western Electric Co Semicinductor device and fabrication method
JPS54144183A (en) * 1978-05-01 1979-11-10 Handotai Kenkyu Shinkokai Insulated gate type electrostatic induction transistor and semiconductor integrated circuit
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
JPS5552272A (en) * 1978-10-13 1980-04-16 Seiko Epson Corp High withstanding voltage dsa mos transistor
US4216489A (en) * 1979-01-22 1980-08-05 Bell Telephone Laboratories, Incorporated MOS Dynamic memory in a diffusion current limited semiconductor structure
DE3005384C2 (de) * 1979-02-15 1994-10-27 Texas Instruments Inc Verfahren zum Herstellen einer monolithischen integrierten Halbleiterschaltung
US4325180A (en) * 1979-02-15 1982-04-20 Texas Instruments Incorporated Process for monolithic integration of logic, control, and high voltage interface circuitry
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
DE2926417A1 (de) * 1979-06-29 1981-01-22 Siemens Ag Dynamische halbleiterspeicherzelle und verfahren zu ihrer herstellung
EP0024905B1 (en) * 1979-08-25 1985-01-16 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated-gate field-effect transistor
FR2477778A1 (fr) * 1980-03-04 1981-09-11 Thomson Csf Structure de transistor a effet de champ a grille isolee et application a une realisation de portes logiques
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
JPS5758351A (en) * 1980-09-24 1982-04-08 Toshiba Corp Substrate biasing device
JPS57162359A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
JPS5994861A (ja) * 1982-11-24 1984-05-31 Hitachi Ltd 半導体集積回路装置及びその製造方法
EP0115098B1 (en) * 1982-12-27 1987-03-18 Koninklijke Philips Electronics N.V. Lateral dmos transistor device having an injector region
US4587713A (en) * 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
JPS60196974A (ja) * 1984-03-19 1985-10-05 Toshiba Corp 導電変調型ｍｏｓｆｅｔ
US4963951A (en) * 1985-11-29 1990-10-16 General Electric Company Lateral insulated gate bipolar transistors with improved latch-up immunity
US5160491A (en) * 1986-10-21 1992-11-03 Texas Instruments Incorporated Method of making a vertical MOS transistor
GB8713388D0 (en) * 1987-06-08 1987-07-15 Philips Electronic Associated Semiconductor device
JP2643524B2 (ja) * 1990-02-27 1997-08-20 日本電気株式会社 バイポーラ集積回路装置
JP2987884B2 (ja) * 1990-06-04 1999-12-06 日産自動車株式会社 半導体装置
JP3212150B2 (ja) * 1992-08-07 2001-09-25 株式会社日立製作所 半導体装置
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
EP0789401A3 (en) * 1995-08-25 1998-09-16 Matsushita Electric Industrial Co., Ltd. LD MOSFET or MOSFET with an integrated circuit containing thereof and manufacturing method
US6392274B1 (en) * 2000-04-04 2002-05-21 United Microelectronics Corp. High-voltage metal-oxide-semiconductor transistor
EP1220323A3 (en) * 2000-12-31 2007-08-15 Texas Instruments Incorporated LDMOS with improved safe operating area
US11973108B2 (en) 2020-12-01 2024-04-30 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3456168A (en) * 1965-02-19 1969-07-15 United Aircraft Corp Structure and method for production of narrow doped region semiconductor devices
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
US3461360A (en) * 1965-06-30 1969-08-12 Ibm Semiconductor devices with cup-shaped regions
US3445734A (en) * 1965-12-22 1969-05-20 Ibm Single diffused surface transistor and method of making same
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
NL96608C (en]) * 1969-10-03
US3600647A (en) * 1970-03-02 1971-08-17 Gen Electric Field-effect transistor with reduced drain-to-substrate capacitance
US3711940A (en) * 1971-02-08 1973-01-23 Signetics Corp Method for making mos structure with precisely controlled channel length
JPS5121614B2 (en]) * 1972-06-21 1976-07-03

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144479A (ja) * 1983-01-28 1984-08-18 エスエスエムシー　インコーポレーテッド ミシンの押しボタン制御モジユ−ル

Also Published As

Publication number Publication date
NL7211602A (en]) 1973-02-28
DE2242026A1 (de) 1973-03-15
US4007478A (en) 1977-02-08
JPS4831061A (en]) 1973-04-24
CA965188A (en) 1975-03-25
GB1400574A (en) 1975-07-16

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